elektronische bauelemente SSG10N10 10a , 100v , r ds(on) 21m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. sop - 8 10n10sc a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen free description the SSG10N10 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available marking package information package mpq leader size sop-8 3k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t a =25c 10 a continuous drain current 1 t a =70c i d 7.5 a pulsed drain current 2 i dm 50 a total power dissipation @ t a =25c 4 p d 1.6 w single pulse avalanche energy 3 e as 98 mj single pulse avalanche current i as 41 a operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 80 c / w date code millimeter millimeter ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. g s s s d d d d
elektronische bauelemente SSG10N10 10a , 100v , r ds(on) 21m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2.5 - 4.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - 1 v ds =80v, v gs =0 drain-source leakage current t j =55c i dss - - 5 a v ds =80v, v gs =0 - - 21 v gs =10v, i d =10a static drain-source on-resistance 2 r ds(on) - - 30 m v gs =7v, i d =6a total gate charge 2 q g - 27.6 - gate-source charge q gs - 11.4 - gate-drain (miller) change q gd - 7.9 - nc i d =7a v ds =80v v gs =10v turn-on delay time 2 t d(on) - 15.6 - rise time t r - 17.2 - turn-off delay time t d(off) - 16.8 - fall time t f - 9.2 - ns v ds =50v i d =7a v gs =10v r l =3.3 input capacitance c iss - 1890 - output capacitance c oss - 268 - reverse transfer capacitance c rss - 67 - pf v gs =0 v ds =15v f =1.0mhz guaranteed avalanche characteristics single pulse avalanche energy 5 eas 53 - - mj v dd =25v, l=0.1mh, i as =30a source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0 , t j =25c continuous source current 1,6 i s - - 10 a pulsed source current 2,6 i sm - - 50 a v d =v g =0, force current reverse recovery time t rr - 34 - ns reverse recovery charge q rr - 47 - nc i f =7a, di/dt=100a/s , t j =25c notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 125 /w when mounted on min. copper pad. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the eas data shows max. rating . the test condi tion is v dd =25v,v gs =10v,l=0.1mh,i as =41a 4. the power dissipation is limited by 150c, junction temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation.
elektronische bauelemente SSG10N10 10a , 100v , r ds(on) 21m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves characteristic curves
elektronische bauelemente SSG10N10 10a , 100v , r ds(on) 21m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually.
|
